[Photolithography] Spin-coating, baking, exposure and development conditions: AZ-series

[Photolithography] Spin-coating, baking, exposure and development conditions: AZ-series

One of the most commonly used photoresists is AZ 1500-series. Here, I make a note on spin-coating, baking, exposure and development conditions of AZ 1512 HS Photoresist. 

Useful links:

Photoresist informaiton: http://www.microchemicals.com/products/photoresists/az_1512hs.html. 

Data sheet (pdf): http://www.microchemicals.com/micro/az_1500_series.pdf

Exposure data (pdf): http://www.microchemicals.com/technical_information/exposure_photoresist.pdf

AZ 1512 HS Photoresist

1. Spin-coating

- Spin speed: 5770 rpm for 1.0 μm thickness

- Spin speed: 4000 rpm for 1.2 μm thickness

(Data from (pdf): http://www.microchemicals.com/micro/az_1500_series.pdf)

2. Baking

- Prebake: 100 ˚C, 50 seconds, hotplate

- Postexposure bake: Not required

(Data from (pdf): http://www.microchemicals.com/micro/az_1500_series.pdf)

3. Exposure

- Exposure: 15 seconds, (at intensity 20 mW/㎠)

- MA6 mask aligner intensity in July 2016: 10.3 mW/㎠ (365 nm), 19.3 mW/㎠ (400 nm)

(Exposure data (pdf): http://www.microchemicals.com/technical_information/exposure_photoresist.pdf)

(An integrated g-, h-, and i-line intensity of 20 mW/㎠)

4. Development

- Developer: AZ 400 K

- Dilution: 1:4 (1 AZ400K, 4 Water)

- Development: 2 minutes (immersion)

 

(Developer AZ400K data sheet (pdf): http://www.microchemicals.com/micro/az_400k_developer.pdf)

For most applications immersion for approximately 1 – 3 minutes in the high contrast makeup is recommended. For thicker resist films, especially with AZ 4562, use about 30 seconds per micron film thickness as a starting value. The developer bath should be maintained at constant temperature (+/-1°C) within the range 20 – 25 °C. For less critical applications immersion for approximately 60 seconds in the high-speed make-up is recommended, for thick coatings time has to be prolonged as mentioned above. In all cases use mechanical agitation with the motion in the plane of the wafers. Avoid vigorous agitation. Rinse immediately in deionized water until resistivity is within specifications. Spin dry in air or force dry with filtered nitrogen.

5. Postbake

- Postbake: 115 ˚C, 50 seconds, hotplate

6. Removal (after metal deposition)

- Remover: AZ 100 Remover

- Removal: 10 minutes immersion

- Sonication if required

8 Aug 2016 

Coherent Harmonic Oscillator 

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