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[Photolithography] Negative resist: Spin-coating, baking, exposure and development conditions: AZ nLof 2020 본문
[Photolithography] Negative resist: Spin-coating, baking, exposure and development conditions: AZ nLof 2020
(gguro) 2016. 10. 17. 06:37[Photolithography] Negative resist: Spin-coating, baking, exposure and development conditions: AZ nLof 2020
One of the most commonly used negative photoresists is AZ nLof 2020. Here, I make a note on spin-coating, baking, exposure and development conditions of the negative tone photoresist.
Useful links:
Photoresist informaiton: http://www.microchemicals.com/products/photoresists/az_nlof_2020.html
Data sheet (pdf): http://www.microchemicals.com/micro/AZ_nLOF2000_bulletin.pdf
AZ 2020 nLof Photoresist negative
1. Spin-coating
- Spin speed: 3000 rpm for 2.0 μm thickness (60 s)
(Data from (pdf): http://www.microchemicals.com/micro/AZ_nLOF2000_bulletin.pdf)
2. Baking
- Soft prebake: 110 ˚C, 60 seconds, hotplate, direct contact
- Postexposure bake: 110 ˚C, 60 seconds, hotplate, direct contact
In case direct contact is not available, for example, for Lithium Niobate substrates (personal parameters)
- Soft prebake: 150 ˚C, 300 s, on a dummy Si wafer, pin-up hotplate, non-contact, lid closed
- Postexposure bake: 150 ˚C, 300 s, on a dummy Si wafer, pin-up hotplate, non-contact, lid closed
(Data from (pdf): http://www.microchemicals.com/micro/AZ_nLOF2000_bulletin.pdf)
3. Exposure
- Exposure: i-line @ 65 mJ/㎠
- MA6 mask aligner intensity in July 2016: 10.3 mW/㎠ (365 nm), 19.3 mW/㎠ (400 nm)
- Exposure time: 6 seconds (~ 61.8 mJ/㎠)
(Data from (pdf): http://www.microchemicals.com/micro/AZ_nLOF2000_bulletin.pdf)
4. Development
- Developer: AZ 726 MIF (or AZ 300 MIF)
- Development: 60 seconds (single puddle)
(Figure: http://www.lithoguru.com/scientist/lithobasics.html)
5. Post development bake
- Post development bake: 150 ˚C, 60 seconds, hotplate
In case direct contact is not available, for example, for Lithium Niobate substrates (personal parameters)
- Soft prebake: 180 ˚C, 300 s, on a dummy Si wafer, pin-up hotplate, non-contact, lid closed
6. Removal (after metal deposition)
- Remover: AZ 400T or AZ 770 Remover
- Alternative remover: TechniStrip® NI555 (http://www.microchemicals.com/products/remover_stripper/technistrip_ni555.html)
- More alternative removers: TechniStrip® D350 (link) or Microchem Remover PG (pdf link)
- Removal: 10 minutes immersion
- Sonication if required
17 October 2016
Coherent Harmonic Oscillator
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